After 10 years of research on GaN at CRHEA-CNRS (FRANCE), LUMILOG was founded in December 2001 by three research scientists:

LUMILOG is currently developing and manufacturing Bulk GaN (GaN Free Standing) and GaN epiwafers on sapphire substrates with very low dislocations densities. LUMILOG is the first European nitride foundry.

GaN material is a revolution in semiconductor sector.
It is involved in many Opto and Micro electronics applications.
GaN have a considerable impact on products of next generation due to high-output power and increase efficiency that improve the performance of laser diodes, light-emitting diodes (LED), high-power transistors and other devices. LUMILOG’s substrates are suitable for DVDs, general lighting, cellular phone base stations and other products.

The current production is secured by MOVPE and HVPE reactors.
Tools such as RIE and mask aligner for photolitography are involved in 2S-ELO and GaN Free Standing processing steps.
Sophisticated characterization equipments are also used to ensure that our specifications are always exceeded.