LUMILOG | GaN substrates: Bulk GaN and GaN Templates on sapphire substrates

High quality GaN substrates are required to fabricate long-lived, efficient and reliable optoelectronic and electronic devices. Nitride semiconductors are currently used in a variety of components such as near UV Laser Diodes for next generation DVDs, high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defence applications.

LUMILOG offers high quality and very cost effective GaN Free Standing and GaN Templates on sapphire substrate:

GaN Free Standing
Bulk GaN substrates are of excellent quality and perfectly adapted to laser diodes HB LEDs and high power high frequency transistors.

GaN Free Standing LED Quality (ref:FSLEDQ51N)
GaN Free Standing LED Quality Epifinished(ref:FSLEDQE51N)

GaN Templates on sapphire substrates

Standard Templates :
Standard templates are cost effective, low dislocation density GaN substrates, suitable for all Opto and electronic applications.
Standard templates are offered in 3 different types:

- Non intentionally doped (ref: STNID)

- Silicon doped (ref: STN)

- Fe-doped semi insulating (ref: STINS)

Ultra Low Dislocation Templates:
ULD templates are particularly well adapted for high brightness UV LEDs.
ULD templates are offered in 2 different types:

- Non intentionally doped (ref: ULDNID)

- Silicon doped (ref: ULDN)

Sapphire Substrate Characteristics

Diameter Ø2"

Orientation (0001) off 0.25 ± 0.1°

Sapphire thickness 0.330 mm

Polishing Single side polished

Diameter	Ø2"
Orientation	(0001) off 0.25 ± 0.1°
Sapphire thickness	0.330 mm
Polishing	Single side polished