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     Semi insulating GaN Templates
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     MOVPE of GaN and Lateral Overgrowth
     Nitride Semiconductors
     Micro Epitaxial Lateral Overgrowth of GaN by MOVPE
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Press release  Print
In the fore front of opto-electronics 27.10.2003
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Semi Insulating GaN Templates 7.4.2003
French company Lumilog is starting the production of a novel Fe-doped semi insulating GaN substrate for nitride based electronics.
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"Invest in Côte d'Azur": LUMILOG 10.12.2002
The Sophia Antipolis start-up markets a new semiconductor compound:
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Epitaxial Lateral Overgrowth GaN

MOVPE of GaN and Lateral Overgrowth 13.4.2004
Metal organic vapour phase epitaxy of GaN and lateral overgrowth
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Nitride Semiconductors 15.4.2003
A systematic and in-depth overview of ceramic semiconductors based on nitrides, on both a high and current level.
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Micro Epitaxial Lateral Overgrowth of GaN by MOVPE 9.12.2002
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
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