French company Lumilog is starting the production of a novel Fe-doped semi insulating GaN substrate for nitride based electronics.

The product consists of a 4-micron-thick single crystal GaN layer deposited on a 2-inch diameter sapphire substrate. GaN material exhibits a sheet resistance higher than 107 Ohm at 300K and a low threading dislocation density.

The new product is mostly targeted for substrate applications for AlGaN/GaN high electron mobility transistors (HEMTs). Perfectly lattice matched to GaN-based devices, this low cost semi-insulating substrate is excellent for a variety of nitride electronic devices.

High quality GaN substrates are required to fabricate long-lived, efficient and reliable optoelectronic and electronic devices. Nitride semiconductors are currently used in a variety of components such as near UV laser diodes for next generation DVDs, high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and defense applications.

About LUMILOG

Located in the Technological Park of Sophia Antipolis, 20 km from Nice Airport, LUMILOG manufactures cost-effective GaN epiwafers on sapphire with low dislocation densities, utilizing the MOVPE technique.

Using proprietary processes, LUMILOG also produces Epitaxial Lateral Overgrown GaN on 2-inch sapphire substrates with a very low dislocations density between stripes and develops bulk quality free-standing GaN substrates.

Sources : Compound Semiconductor