GaN-on-GaN technology is the perfect solution for applications requiring high power density. The lower defectivity in epitaxial GaN-on-GaN allows higher current density and efficiency, and provides extended device durability. 


Thanks to the high thermal conductivity and low electrical resistivity of Lumilog’s substrates, GaN-on-GaN technology gives access to new structures and reduced form factor, hence allows smaller packaging and reduced cost of the packaged device.

Benefits GaN-on-GaN Technology


Maximize GaN Performance


High quality GaN substrates are key to fabricate durable, efficient, and reliable optoelectronic and microelectronic devices. GaN is increasingly seen as a the substrate of choice compared to other materials (Silicon, Silicon Carbide, Sapphire) as the defectivity (threading dislocations) of the active epilayer is strongly reduced.


Hetero Epitaxy Homo Epitaxy

More about GaN properties

Crystal quality of the substrate is of upmost importance as it will guide the crystal quality of the active layers, hence maximize the device performance. Lumilog free-standing GaN substrates have low threading dislocation density, below 107/cm². We continue to develop GaN substrates with higher crystalline quality. Contact us to learn more about our recent developments.

In addition to crystal quality, tight control of the geometrical properties of the substrate, such as TTV (Total Thickness Variation), bow, warp or SORI, is key to allow consistent and optimum epilayer processing.

GaN Properties

Lumilog’s GaN substrates are c-plane. The Gallium face is processed epiready whereas the Nitrogen face is ground and etched. Our substrates are n-type doped with a free carrier density in the range 1-3×18/cm3 for an optimum combination of transparency and electrical conductivity. Higher doping levels, to further reduce resistivity, are available upon request.  

Contact Us to Learn more about GaN-on-GaN Technology.