With the fast transition towards higher connectivity, Radio-Frequency (RF) power devices will represent a significant contributor to the new infrastructure, including telecom (base stations and small cells), radars, and satellite communication.

To date, GaN RF devices are based on lateral architectures, such as high-electron mobility transistors (HEMT), fabricated with thin layers of GaN on foreign semi-insulating substrates, such as GaN-on-Silicon or GaN-on-SiC.

New GaN-based technologies, providing better performance and reduced size as well as robustness, are under development.

Learn more about GaN-on-GaN technology.

RF Power Devices - GAN Technology

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