Electrical Properties of Vertical GaN-on-GaN Schottky Diodes
Check out this new article on Journal of Crystal Growth on the electrical properties of vertical GaN-on-GaN Schottky diodes fabricated from Lumilog GaN substrates.
In this exciting collaboration with CNRS-CRHEA, cathodoluminescence and electrical C-V / I-V measurements were combined to probe the impact of the GaN substrate quality on the Schottky diode performances.
This work aimed at better understanding the impact of the substrate on device performances, hence contributing to the development of next generation Gallium Nitride devices for Power Electronics.
Link to Article: Thi Huong Ngo et al, J. Cryst. Growth, 125911, 2020