Lumilog GaN substrates boost the performances of AlGaN barrier transistors for 5G
News from Semicon Today magazine reporting record breaking AlGaN barrier transistors for 5G.
Congratulations to the researchers from CNRS-LAAS, IEMN - University of Lille, and from CNRS-CRHEA - University Cote d'Azur who have developped aluminium gallium nitride AlGaN-barrier high-electron-mobility transistors (HEMTs) with record power performance at 40GHz!
We are proud that this record was reached thanks to Saint-Gobain Lumilog 2''-diameter free standing GaN substrates.
Link to Semicon Today news: www.semiconductor-today.com/news_items/2019