lumilog GaN AlGaN barrier 5G

News from Semicon Today magazine reporting record breaking AlGaN barrier transistors for 5G. 

Congratulations to the researchers from CNRS-LAAS, IEMN - University of Lille, and from CNRS-CRHEA - University Cote d'Azur who have developped aluminium gallium nitride AlGaN-barrier high-electron-mobility transistors (HEMTs) with record power performance at 40GHz!

We are proud that this record was reached thanks to Saint-Gobain Lumilog 2''-diameter free standing GaN substrates.

Link to Semicon Today news:

Link to Article: Mohamed-Reda Irekti et al, Semicond. Sci. Technol., vol 34, p 12LT01, 2019