The French GaNeXT (Laboratoire d’Excellence) recently granted a project to develop next generation Gallium Nitride (GaN) device for Power Electronics. The goal is to support the global drive to
News from Semicon Today magazine reporting record breaking AlGaN barrier transistors for 5G. Congratulations to the researchers from CNRS-LAAS, IEMN - University of Lille, and from CNRS-CRHEA -
GaN templates are ideal at Research & Development or laboratory phase. To accelerate the developments of new applications in LED and power electronics, Saint-Gobain Lumilog has extending its portfolio
Saint-Gobain Lumilog will be present at the 2019 International Conference on Nitride Semiconductors to discuss GaN substrate needs and trends for advanced Photonics and Electronics. Contact us.
