Saint-Gobain Lumilog leverages its unique and proprietary process to manufacture epi-ready free-standing GaN wafers in both 2-inch and 100 mm diameter. GaN free-standing wafers are n-type doped GaN and single side polished. Lumilog GaN is non-patterned which maximizes die processing yields. GaN crystal quality is identical for both 2-inch and 100mm free-standing GaN to accelerate scale-up & industrialization.


GaN White series shows the perfect combination of electrical conductivity and transparency for energy efficient and durable LEDs.


GaN Blue series is designed for Laser applications, where its controlled miscut and improved mechanical properties significantly improve the fab yields.


GaN is now Green. GaN Green series has been developped for power electronics applications. Its reduced electrical resistivity combined with its excellent crystal quality make GaN Green series the substrate of choice for next generation energy efficient power devices.

 

DOWNLOAD:  Free Standing GaN Substrates datasheet

 

Lumilog GaN Free Standing

 

 

  White series Blue Series Green series
  2-inch 100mm 2-inch 2-inch 100mm
Geometry
Diameter (mm) 50.8 100 50.8 50.8 100
Thickness (µm) 300 500 400 300 450
Total Thickness Variation – TTV (µm) ≤ 25 ≤ 50 ≤ 25 ≤ 25 ≤ 50
SORI (µm) ≤ 30 ≤ 100 ≤ 30 ≤ 30 ≤ 100
|Bow| (µm) ≤ 10 ≤ 40 ≤ 10 ≤ 10 ≤ 40
Surface finish
Ga-face Surface Finish Epiready
Crystalline quality
Miscut Variation ≤ 0.3 ≤ 0.5 ≤ 0.2 ≤ 0.5 ≤ 0.3
XRD (0002) FWHM (arcsec) 110-120 110-120 70-80 70-80 70-80
Average TD (cm-2)

~ 8x106

~ 8x106 ~ 5x106 ~ 5x106 ~ 5x106
Doping level
n Carrier Concentration (cm-3) 2x1018 2x1018 2x1018 3x1018 3x1018
Resistivity (mΩ.cm) ≤ 20 ≤ 20 ≤ 20 ≤ 10 ≤ 10

 

 

The purity level of Lumilog GaN free-standing wafers is Silicon Fab approved. Lumilog GaN is also compliant with EU directive 2015/863.

 

Typical Packaging

Single wafer shipping box (polypropylene). Double-bagged, vacuum-sealed in class-ISO 6 cleanroom environment. Ready to go directly in cleanroom

 

New developments

In order to improve uniformity and epi-process yields, miscut and miscut range can be adjusted upon request. We continue to develop consistent higher crystal quality GaN substrates and design substrates that meet both application and epi-process requirements.

 

Contact Us to learn more about Free Standing GaN substrates.

Related Applications

Find out more about free-standing GaN applications