GaN templates represent a cost effective alternative to bulk GaN so are ideal at Research & Development or laboratory phase, and for applications that are not as demanding as those requiring free standing GaN.

Lumilog’s GaN templates on sapphire are available in both 2-inch and 100mm diameter with different doping types, Non-Intentionally Doped (STNID), n-type Si doped (STN), and semi-insulating (STINS).

DOWNLOAD:  GaN Templates datasheet

Lumilog GaN Templates

 

 

  2-inch templates 100mm templates
  STN STNID STINS STN-100 STNID-100 STINS-100
Geometry
Thickness (µm) 3.5 3.5 3.5 3.5 3.5 3.5
Thickness Uniformity (%) ± 5 ± 5 ± 5 ± 5 ± 5 ± 5
Crystalline quality
Average TD (cm²) 5x108 5x108 8x108 5x108 5x108 8x108
Doping level
n Carrier Concentration (cm3) 1-3x1018 ≤3x1017 - 1-3x1018 ≤3x1017
Resistance (MΩ/square) - - ≥10 -   ≥10
Carrier Concentration Uniformity (%) ± 10 - - ± 10   -
Sapphire substrate
Diameter (mm) 50.8 50.8 50.8 100 100 100
Thickness (µm) 330 330 330 650 650 650
(0001) Center Miscut 0.25° ±0.1 0.25° ±0.1 0.25° ±0.1 0.25° ±0.1 0.25° ±0.1 0.25° ±0.1

 

Typical Packaging

25 wafer shipping box (polypropylene). Double-bagged, vacuum-sealed in class-ISO 6 cleanroom environment. Ready to go directly in cleanroom

 

New developments
 
To meet with the needs of new applications such as RF and power electronics, we continue to develop new GaN templates with different substrates, such as GaN on Silicon Carbide (GaN-on-SiC) templates, as well as GaN epiwafers. GaN on Patterned Sapphire Substrates (PSS) templates are also available upon request.
 

Contact Us to learn more about GaN Templates.

Related Applications

Find out more about our GaN Template Applications